This resulted within a diminished do the job purpose plus the formation of the Schottky contact amongst the BrGO and n-sort Si substrate. Because of the higher proportion of B-C and B-C3 bonding during the BrGO/Si device than that while in the rGO/Si, the decreased Schottky barrier height from the https://www.directivepublications.org/journal-of-applied-nanoscience/