Foundry Competitors heats up in three dimensions and with novel technologies as planar scaling benefits diminish. by Ed Sperling One of such specific properties is that gate oxides in SiC-based power devices are generally characterised by a relatively large number of interface states, resulting in the so-called threshold-voltage hysteresis. The https://www.quora.com/profile/Trevor-Flatcher-2/Exploration-of-Silicon-Carbide-Application-in-Friction-Materials-https-iflatiron-com-exploration-of-silicon-carbide-a